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参数指标
Product：WNM07N60
Configuration：N-Channel MOSFET
Channel：1
Drain-Source Voltage VDS(V)(Max.)：600
Gate-Source Voltage VGS(V)(Max.)：±30
Gate Threshold Voltage VGS(th)(V)(Max.)：5
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Typ.)：1
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Max.)：1.2
Input Capacitance CISS(pF)(Typ.)：930
Continuous Drain Current ID(@TA = 25℃)(A)(Max.)：7
Power Dissipation PD(@TA = 25℃)(W)(Max.)：156
Body Diode Forward Voltage VSD(V)(Typ.)：0.74
Body Diode Forward Voltage VSD(V)(Max.)：1.5
Package：TO-220
Size(mm)(LxW)：22.05 x 10.15
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