toshiba offers a wide range of 2nd gen.650-v silicon carbide schottky barrier diodes (sic sbds) with a rated current of 2 a to 10 a, in through-hole (to-220) packages.
the 2nd gen.sic sbd series provides a 30% lower figure of merit (vf*qc)*1 and a higher surge peak forward current (ifsm) than the 1st gen.sic sbd series and therefore helps improve the efficiency and reduce the size of power supplies.
东芝提供各种第二代gen.650-v碳化硅肖特基势垒二极管（sic sbd），额定电流为2 a至10 a，采用通孔（to-220）封装。
第二代gen.sic sbd系列的品质因数（vf * qc）* 1低于第一代gen.sic sbd系列，浪涌峰值正向电流（ifsm）低30％，因此有助于提高效率并缩小尺寸 电源。
introductionhigh surge forward current (ifsm): approximately 7 to 9 times of current rating if(dc)figure of merit (vf･qc[note 1]): approximately 30% reduction compared to the 1st generation devices, realizing higher efficiencyvarious package lineup including isolated type and surface mount type：suit various design requirements
purposesic sbds are suitable for power factor correction (pfc) circuits in high-efficiency power supplies, chopper circuits, and freewheel diodes integrated in switching devices.consumer electronics and office equipment: 4k lcd tvs, projectors, multifunction copiers, etc.industrial equipment: communication base stations, pc servers, etc.ac-dc power suppliesdc-dc power supplies
*1 vf・qc : the product of forward voltage and total charge (vf*qc) indicates the loss performance of sic schottky barrier diodes. when devices with the same current rating are compared, a device with a lower vf*qc provides a lower loss.
高浪涌正向电流（ifsm）：电流额定值的大约7至9倍if（dc）
优点（vf·qc [注1]）：与第1代设备相
* 1 vf·qc：正向电压和总电荷（vf * qc）的乘积表示sic肖特基势垒二极管的损耗性能。 当比较具有相同电流额定值的器件时，具有较低vf * qc的器件提供较低的损耗。
